Two-Dimensional Analytical Threshold Voltage Modelling of Pseudomorphic Si0.8Ge0.2p-Channel MOSFETs

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ژورنال

عنوان ژورنال: Acta Physica Polonica A

سال: 2011

ISSN: 0587-4246,1898-794X

DOI: 10.12693/aphyspola.120.1043