Two-Dimensional Analytical Threshold Voltage Modelling of Pseudomorphic Si0.8Ge0.2p-Channel MOSFETs
نویسندگان
چکیده
منابع مشابه
On the Extraction of Threshold Voltage, Effective Channel Length and Series Resistance of MOSFETs (Invited)
-The first part of this article presents the modeling of the long-channel bulk MOSFET as a particular case of the SOI MOSFET. The second part reviews compares and scrutinizes various methods to extract the threshold voltage, the effective channel and the individual values of drain and source resistances. These are important device parameters for modeling and circuit simulation.
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2011
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.120.1043