Turn-Off Safe Operating Area of Gate Turn-Off Thyristors with Shorted Anode Emitter
نویسندگان
چکیده
منابع مشابه
Numerical modeling of gate turn-off thyristor using SICOS
This paper presents a numerical model of gate turn-off thyristors (GTO’s). The new concept of a controlledswitch realized by a controlled-current source is first introduced. Using this basic model, an equivalent circuit of the GTO is given. According to the characteristics of GTO given by manufacturers, the equations connected with all the parameters of the equivalent circuit are deduced. All o...
متن کاملBacterial Pathogenesis: When a turn off is a turn on
Pathogenic bacteria express distinct sets of genes at different stages in their life cycles; inappropriate expression of normally repressed genes during host colonization can interfere with bacterial survival.
متن کاملResonant and off-resonant transients in electromagnetically induced transparency: Turn-on and turn-off dynamics
Andrew D. Greentree, T. B. Smith, S. R. de Echaniz, A. V. Durrant, J. P. Marangos, D. M. Segal, and J. A. Vaccaro Quantum Processes Group, Department of Physics and Astronomy, The Open University, Walton Hall, Milton Keynes MK7 6AA, United Kingdom Quantum Optics and Laser Science Group, Blackett Laboratory, Imperial College of Science Technology and Medicine, Prince Consort Road, London SW7 2BW...
متن کاملSteep Turn On/Off "Green" Tunnel Transistors
Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise, to republish, to post on servers or to redistribute to lists, requires prior specific permission....
متن کاملIGBT modules robustness during turn-off commutation
The behaviour in terms of robustness during turn-off of power IGBT modules is presented. The experimental characterisation is aimed to identify the main limits during turn-off in power IGBT modules in typical hard switching applications. In this paper an experimental characterization of high power IGBT modules at output currents beyond RBSOA, at high junction temperatures and under different dr...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEJ Transactions on Electronics, Information and Systems
سال: 1987
ISSN: 0385-4221,1348-8155
DOI: 10.1541/ieejeiss1987.107.1_80