Tuning electronic properties and contact type in van der Waals heterostructures of bilayer SnS and graphene

Using first-principles calculations, we study the structural and electronic properties of bilayer SnS/graphene, SnS/bilayer graphene (AA-stacked), (AB-stacked) monolayer SnS/ graphene/monolayer SnS van der Waals (vdW) heterostructures. Electronic all components vdW heterostructures are well preserved, which reflects weakness interaction. In cases SnS/graphene an Ohmic contact is formed can be turned first into p-type then n-type Schottky contacts via application external electric field. Calculations show that also at interface heterostructure, but interestingly, by applying perpendicular field a transition from semimetal/semiconductor to semiconductor/semiconductor one occurs enhance its optical properties. Alternatively, in SnS/graphene/monolayer established changes under applied Our results clearly indicate tuned efficiently field, important designing new nanoelectronic devices.