Tunable Class-F high power amplifier at X-Band using GaN HEMT
نویسندگان
چکیده
منابع مشابه
Design of X Band High Power Amplifier MMIC Based on AlGaN/GaN HEMT
In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...
متن کاملWATT GAN HEMT POWER AMPLIFIER FOR LTE 5 Watt GaN HEMT Power Amplifier for LTE
This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39 % for an output power of 36.7 dBm at 2.4 GHz for an input power of 25 dBm. The carrier to intermodulation ratio is...
متن کاملA High-Efficiency Transmission-Line GaN HEMT Class E Power Amplifier
In modern wireless communication systems it is required that the power amplifier could operate with high efficiency, high linearity, and low harmonic output level simultaneously. To increase efficiency of the power amplifier, a switching-mode Class E mode technique can be applied. This kind of a power amplifier requires an operation in saturation mode resulting in a poor linearity, and therefor...
متن کاملA Dual Band High Efficiency Class-F GaN Power Amplifier Using a Novel Harmonic-Rejection Load Network
A class-F high efficiency GaN power amplifier (PA) for dual band operation at 2.14 GHz and 2.35 GHz is proposed. A novel dual band harmonic-rejection load network, which controls the terminating impedances of the second and third harmonics, and contributes greatly to efficiency improvement of PA, is described. In addition, a matching network which guarantees the high efficiency and gain of PA f...
متن کاملHighly efficient 2.7-2.9GHz class-F and inverse class-F power amplifiers in GaN HEMT technology
In this letter, novel class-F and inverse class-F power amplifier (PA) topologies were proposed, simulated, realized and measured for 2.7–2.9GHz frequency band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations are made on Rogers TMM3 dielectric material which has 0.381mm thickness and 3.27 dielectric constant. Proposed class-F and inverse class-F PAs have 10W (...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: TURKISH JOURNAL OF ELECTRICAL ENGINEERING & COMPUTER SCIENCES
سال: 2018
ISSN: 1300-0632,1303-6203
DOI: 10.3906/elk-1803-71