Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN
نویسندگان
چکیده
منابع مشابه
hermal quenching of photoluminescence from Er-doped GaN thin films
The green (537 and 558 nm) and near infrared (1.54 mm) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity. Thermal quenching measurements showed that the 31 4 2 4 integrated green Er PL intensity ( S / H → I ) remained nearly constant up to 150 K, but decreased at higher temperatures 3 / 2 11 /...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2011
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.84.075212