Triangular Mott-Hubbard Insulator Phases ofSn/Si(111)andSn/Ge(111)Surfaces

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Triangular Mott-Hubbard insulator phases of Sn/Si(111) and Sn/Ge(111) surfaces.

The ground state of Sn/Si(111) and Sn/Ge(111) surface alpha phases is reexamined theoretically, based on ab initio calculations where correlations are approximately included through the orbital dependence of the Coulomb interaction (in the local density+Hubbard U approximation). The effect of correlations is to destabilize the vertical buckling in Sn/Ge(111) and to make the surface magnetic, wi...

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ژورنال

عنوان ژورنال: Physical Review Letters

سال: 2007

ISSN: 0031-9007,1079-7114

DOI: 10.1103/physrevlett.98.086401