Transparent ZnO-Based Ohmic Contact to p-GaN
نویسندگان
چکیده
منابع مشابه
ZnO–GaN tunnel junction for transparent ohmic contacts to p-GaN
The fabrication procedure of transparent n+-ZnO–p-GaN ohmic junctions has been described. The influence of consecutive technological steps on the electrical, structural and electronic properties of the junction has been studied. The results indicate that the predeposition of Au nucleation film plays a crucial role for the final contact properties. The ohmic behaviour is explained in terms of fo...
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A new ohmic contact scheme for gallium nitride is presented. The use of Nitrideforming metal Over Gallide-forming metal, “NOG”, can modify the thermodynamic activity of N and Ga near the interface. This in turn can modify the near-surface point defect concentrations, particularly the vacancies of Ga and N. The principle of this contact scheme was shown to be consistent with results from Ni/Au, ...
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The effect of nanoscale Pt islands on the electrical characteristics of contacts to p-type gallium nitride (GaN) has been investigated to explore the feasibility for the flip-chip configuration light-emitting diodes (LEDs) using an Al-based reflector. An as-deposited Al contact to p-GaN with a net hole concentration of 3 × 10 cm−3 was rectifying. However, an Al contact with nanoscale Pt islands...
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In this study, a very thin Ni/Au bilayer metal film was prepared by electron beam evaporation and thermal alloying to form ohmic contact on p-type GaN film. After thermal alloying, the current– voltage (I – V) characteristic of Ni/Au contact on p-type GaN film exhibited ohmic behavior. The Ni/Au contacts showed a specific contact resistance of 1.7310 V cm at an alloying temperature of 450 °C. I...
متن کاملHighly low resistance and transparent NiÕZnO ohmic contacts to p-type GaN
We report on a promising Ni ~5 nm!/Al-doped ZnO ~AZO! ~450 nm! metallization scheme for low resistance and transparent ohmic contacts to p-GaN (5310 cm). It is shown that the as-deposited Ni/AZO contact shows a nonohmic characteristic due to the insulating nature of the as-deposited AZO. However, annealing the contacts at 450 and 550 °C for 2 min in air ambient results in linear current–voltage...
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ژورنال
عنوان ژورنال: MRS Proceedings
سال: 2001
ISSN: 0272-9172,1946-4274
DOI: 10.1557/proc-693-i13.1.1