Transition metal co-precipitation mechanisms in silicon
نویسندگان
چکیده
منابع مشابه
Effect of transition metals on oxygen precipitation in silicon
Effects of iron and copper impurities on the amount of precipitated oxygen and the oxide precipitate and stacking fault densities in Czochralski-grown silicon have been studied under varying thermal anneals. Silicon wafers were intentionally contaminated with iron or copper and subsequently subjected to different two-step heat treatments to induce oxygen precipitation. The iron contamination le...
متن کاملTransition‐Metal‐Doped NIR‐Emitting Silicon Nanocrystals
Impurity-doping in nanocrystals significantly affects their electronic properties and diversifies their applications. Herein, we report the synthesis of transition metal (Mn, Ni, Co, Cu)-doped oleophilic silicon nanocrystals (SiNCs) through hydrolysis/polymerization of triethoxysilane with acidic aqueous metal salt solutions, followed by thermal disproportionation of the resulting gel into a do...
متن کاملTransition‐Metal‐Free Cleavage of CO
Tertiary silane 1H , 2-[(diphenylsilyl)methyl]-6-methylpyridine, reacts with tris(pentafluorophenyl)borane (BCF) to form the intramolecular pyridine-stabilized silylium 1+ -HBCF. The corresponding 2-[(diphenylsilyl)methyl]pyridine, lacking the methyl-group on the pyridine ring, forms classic N(py)→B adduct 2H -BCF featuring an intact silane Si-H fragment. Complex 1+ -HBCF promotes cleavage of t...
متن کاملThe electronic properties of transition metal hydrogen complexes in silicon
The electrical levels of various combinations of transition metal-H defects in Si are calculated using spin-polarised local density functional cluster theory with an empirical correction. The shifts of these levels with H can be understood through a displacement and splitting of the gap manifold of states due to the impurity. Passive defects are identified.
متن کاملCryogenic microwave imaging of metal-insulator transition in doped silicon.
We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spati...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Acta Materialia
سال: 2007
ISSN: 1359-6454
DOI: 10.1016/j.actamat.2007.07.030