Transistors based on two-dimensional materials for future integrated circuits
نویسندگان
چکیده
Field-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can at front end of line or back through monolithic heterogeneous remains determined. To achieve this, multiple challenges must overcome, including reducing contact resistance, developing stable and controllable doping schemes, advancing mobility engineering improving high-κ dielectric integration. The large-area growth uniform 2D layers is also required ensure low defect density, device-to-device variation clean interfaces. Here we review development field-effect for use future VLSI technologies. We consider key performance indicators aggressively scaled discuss how these should extracted reported. highlight applications conventional micro/nanoelectronics, neuromorphic computing, advanced sensing, data storage interconnect This Review examines considers that need addressed devices incorporated into technology.
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ژورنال
عنوان ژورنال: Nature electronics
سال: 2021
ISSN: ['2520-1131']
DOI: https://doi.org/10.1038/s41928-021-00670-1