Tracking interfacial changes of graphene/Ge(1 1 0) during in-vacuum annealing

Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of graphene/germanium interface as a function in-vacuum thermal annealing. Specifically, it was found that graphene becomes markedly defective at 650 °C. By combining scanning tunneling microscopy, X-ray photoelectron and near edge absorption fine structure spectroscopy, we concluded these defects are due release H2 gas trapped interface. The produced following transition from as-grown hydrogen-termination Ge(1 1 0) surface emergence reconstructions in substrate. Interestingly, complete self-healing process observed upon annealing 800 identified subtle interplay between microscopic occurring graphene’s defect density is integral advancing understanding growth directly on semiconductor substrates, controlled 2D-3D heterogeneous materials interfacing integrated fabrication technology.