Towards Very High Voltage SiC Power Devices

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major lim...

Material science and device physics in SiC technology for high-voltage power devices

SiC Power Devices and Modules

SiC Power Devices and Modules

High Temperature Power Electronics – Application Issues of SiC devices

High temperature operation capability of power devices enhances performance of the system especially in the automotive industry where weight and volume are critical factors. SiC devices are capable of operating at higher voltages, higher frequencies, and higher junction temperatures, which result in significant reduction in weight and size of the power converter and an increase in efficiency. I...