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TID Effect in SOI Technology

In this paper, a brief overview of TID effect in SOI technology is presented. The introduction of buried oxide(BOX) adds vulnerability to TID effect in SOI transistors because of its large thickness. Also the BOX introduces special charge traps, the delocalized spin centers, which in most cases are positive. The charge buildup in BOX could increase the leakage current in front gate transistor i...

TiD - Documentation of TOBI Interface D

4 TiD Message 2 4.1 Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 4.2 Version . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 4.3 Description . . . . . . . . . . . . . . . . . . ....

Wavelength (å)

We present near-infrared (observed frame) spectra of the high-redshift quasar S4 0636+68 at z = 3.2 which was previously thought to be one of a group of “strong” Fe II emitters (i.e., F (Fe IIλλ4434–4684)/F (Hβ) > 1). Our K-band spectrum clearly shows emission lines of Hβ and [O III]λλ4959, 5007 as well as optical Fe II emission. Our computed value of F (Fe II λλ4434–4684)/F (Hβ) ≃ 0.8 for S4 0...

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