Ti doped SiOC precursor to activate gyroid sensing structures

Ti-doped polymer-derived SiOC ceramic has multi-functional sensing capability due to its semiconductive properties. Their mechanical and chemical stability provide reliable support for their long-term service safe operation in extreme environments. The properties of (SiTiOC) can be optimized by modulation carrier concentration. Meanwhile, it fabricated 3D printing as structural-strengthened components, promising abnormal environmental signals warning under harsh conditions. In this work, SiTiOC gyroid structures were constructed vat photopolymerization. resulting components had thermistor characteristics with a negative temperature coefficient. After the Ti doping, exhibited high conductivity 1.10 S/m, ions formed an efficient percolation network introducing acceptor impurities. also piezoresistive conductive phases generate tunneling-percolation conduction effect. They detect strain less than 0.5%. Furthermore, realize n-butanol p-type semiconductor excellent performance compressive strength Young's modulus 92.83 MPa 4.28 GPa, respectively, ensuring pressure loading.