Threshold Voltage Measurement Protocol “Triple Sense” Applied to GaN HEMTs

Breakdown behaviour of high-voltage GaN-HEMTs

Threshold Voltage Control in Al0.72Ga0.28N/AlN/GaN HEMTs by Work-Function Engineering

The first demonstration of high-Al-composition (> 70%) AlGaN high electron mobility transistors (HEMTs) is reported. High electron mobility (∼1300 cm/Vs at room temperature) was achieved in novel high-Al-composition AlGaN 2-D electron gas structures. The threshold voltages (Vth) of Al0.72Ga0.28N/AlN/GaN HEMTs were shifted from −1.0 to −0.13 V by employing different gate metal stacks, Al/Au and ...

atedA GaN/GaN HEMTs

Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEMT devices. One circuit was designed for operation at 2.0 GHz and achieved a power-added-efficiency of 50%, 38 dBm output power, and 6.2 W/mm power density. A second circuit was designed at 2.8 GHz and achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density.

OFF-state TDDB in High-Voltage GaN MIS-HEMTs

We have investigated time-dependent dielectric breakdown (TDDB) in high-voltage AlGaN/GaN MetalInsulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs) biased in the OFF state. This is an important reliability concern that has been overlooked. Towards this goal, we have developed a novel methodology using ultraviolet light that allows us to separate the permanent effects of dielec...

Technology focus: GaN HEMTs

has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, p223511, 2014]. The resulting structures boast the highest reported mobility for InGaN channels and superior transport at high temperature, according to the research team. Nitride semicondu...