Threshold concentration for H blistering in defect free W
نویسندگان
چکیده
منابع مشابه
Blistering of H-implanted GaN
Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: ~i! ion energy ~from 20 to 150 keV!, ~ii! ion dose ~up to 1.2310 cm!, ~iii! implantation temperature ~from 2196 to 250 °C!, and ~iv! annealing temperature ~up to 900 °C!. Results show that both the onset of blistering ...
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ژورنال
عنوان ژورنال: Journal of Nuclear Materials
سال: 2012
ISSN: 0022-3115
DOI: 10.1016/j.jnucmat.2011.09.019