Thickness-Dependent Study of High- Performance WS<sub>2</sub>-FETs With Ultrascaled Channel Lengths
نویسندگان
چکیده
Ultrascaled WS 2 field-effect transistors (FETs) fabricated on exfoliated multilayer channels with excellent ON-state and OFF-state performance are reported. Recorded high current ( I xmlns:xlink="http://www.w3.org/1999/xlink"> \scriptscriptstyle ON ) ultralow contact resistance R xmlns:xlink="http://www.w3.org/1999/xlink">C were achieved in a double-gated FET at scaled overdrive voltage V xmlns:xlink="http://www.w3.org/1999/xlink">OV = xmlns:xlink="http://www.w3.org/1999/xlink">GS -V xmlns:xlink="http://www.w3.org/1999/xlink">TH ), reaching >600 ? \textA/? \textm) normalized to footprint xmlns:xlink="http://www.w3.org/1999/xlink">DS 1 2 ~ 500 ?×?\textm). We report statistics of more than 50 FETs varying channel lengths, showing behavior small threshold variations, near-ideal subthreshold slope (SS), drain-induced barrier lowering (DIBL). Various thicknesses T xmlns:xlink="http://www.w3.org/1999/xlink">CH ranging from 2.1 7 nm carefully evaluated terms short effects (SCEs) current, body thickness (three layers, the thinnest our statistics) shows best both OFF-state.
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2021
ISSN: ['0018-9383', '1557-9646']
DOI: https://doi.org/10.1109/ted.2021.3058078