Thermal Plasma Chemical Vapor Deposition of SiC.

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

................................................................................................. iii Sammanfattning ..................................................................................... iv Acknowledgement ................................................................................... v List of included publications ..............................................................

متن کامل

Graphene epitaxy by chemical vapor deposition on SiC.

We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well-developed epitaxial graphene growth by Si sublimation that has been known for decades. (1) CVD growth is much less sensitive to SiC surface defects resulting in high electron mobilities of ∼1800 cm(2)/(V s) an...

متن کامل

Heteroepitaxial diamond growth on 4H-SiC using microwave plasma chemical vapor deposition

Deposition of heteroepitaxial diamond via microwave chemical vapor deposition has been performed on a 4H-SiC substrate using bias enhanced nucleation followed by a growth step. In future work, the diamond film will serve as a protective layer for an alpha particle sensor designed to function in an electrorefiner during pyroprocessing of spent fuel. The diamond deposition on the 4H-SiC substrate...

متن کامل

Determination of Optical Properties in Germanium Carbon Coatings Deposited by Plasma Enhanced Chemical Vapor Deposition

In this research, Germanium-carbon coatings were deposited on ZnS substrates by plasma enhanced chemical vapor deposition (PECVD) using GeH4 and CH4 precursors. Optical parameters of the Ge1-xCx coating such as refractive index, Absorption coefficient, extinction coefficient and band gap were measured by the Swanepoel method based on the transmittance spectrum. The results showed that the refra...

متن کامل

Pulsed DC- Plasma Assisted Chemical Vapor Deposition of α-rich Nanostructured Tantalum Film: Synthesis and Characterization

This paper is an attempt to synthesize nanostructured tantalum films on medical grade AISI 316L stainless steel (SS) using pulsed DC plasma assisted chemical vapor deposition (PACVD). The impact of duty cycle (17-33%) and total pressure (3-10 torr) were studied using field emission scanning electron microscopy (FESEM), grazing incidence x-ray diffraction (GIXRD), nuclear reaction analysis (NRA)...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: ISIJ International

سال: 1995

ISSN: 0915-1559

DOI: 10.2355/isijinternational.35.1381