Thermal Atomic Layer Deposition of Polycrystalline Gallium Nitride
نویسندگان
چکیده
منابع مشابه
Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide.
A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle reso...
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Submonolayer quantities of Mn are deposited on wurtzite GaN 0001̄ . The surface is monitored using reflection high energy electron diffraction, which shows a pattern consisting of 3 reconstruction along 101̄0 , but only 1 along 112̄0 . Diffraction analysis shows that the 3 streak intensity is maximized at 0.86 monolayer of Mn deposition. The results indicate that Mn forms linear chains along the 1...
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We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulatorsemiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated...
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ژورنال
عنوان ژورنال: The Journal of Physical Chemistry C
سال: 2019
ISSN: 1932-7447,1932-7455
DOI: 10.1021/acs.jpcc.9b05946