منابع مشابه
Theory of the half-filled Landau level.
A recent theory of a compressible Fermi-liquid like state at Landau level filling factors ν = 1/q or 1 − 1/q, q even, is reviewed, with emphasis on the basic physical concepts.
متن کاملThe half-filled Landau level – composite fermions and dipoles
The composite-fermion approach as formulated in the Fermion Chern-Simons theory has been very successful in describing the physics of the lowest Landau level near Landau level filling factor ν = 1/2. Recent work has emphasized the fact that the true low energy quasiparticles at this filling factors are electrically neutral and carry an electric dipole moment. In a previous work, we discussed at...
متن کاملSpin transition in the half-filled Landau level.
The transition from partial to complete spin polarization of two-dimensional electrons at half filling of the lowest Landau level has been studied using resistively detected nuclear magnetic resonance (RDNMR). The nuclear spin-lattice relaxation time is observed to be density independent in the partially polarized phase but to increase sharply at the transition to full polarization. At low temp...
متن کاملAn Unsettled Issue in the Theory of the Half-Filled Landau Level
Whether the half-filled Landau level can be described in terms of a “Fermi liquid” [1] of composite fermions has been controversial. [1–3,?,5,6,8,9] (Hereafter we shall use the phrase “Fermi liquid” in a loose sense. It does not imply, e.g., a finite quasiparticle weight, but simply means that the long wavelength/low energy current-current correlation functions resemble those of a liquid of fer...
متن کاملLogarithmic Temperature Dependence of Conductivity at Half Filled Landau Level.
We study temperature dependence of diagonal conductivity at half filled Landau level by means of the theory of composite fermions in the weakly disordered regime (kF l >> 1). At low temperatures we find the leading log T correction resulting from interference between impurity scattering and gauge interactions of composite fermions. The prefactor appears to be strongly enhanced as compared to th...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 1994
ISSN: 0268-1242,1361-6641
DOI: 10.1088/0268-1242/9/11s/002