Theoretical Study on Atomic Structures of Thermally Grown Silicon Oxide/Silicon Interfaces
نویسندگان
چکیده
منابع مشابه
Theoretical Studies of the Atomic and Electronic Structures of Grain Boundaries in Silicon and Silicon-carbide
The atomic and electronic structures of a facetted twin boundary in Si and a twin boundary in 6-Sic have been studied theoretically for the first time. The atomic structure of the {211}/{111} facets in Si based on the model by Bourret and Bacmann has been optimised by the Keating model, and the electronic structure has been calculated using a supercell technique and a tight-binding model. It ha...
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ژورنال
عنوان ژورنال: e-Journal of Surface Science and Nanotechnology
سال: 2006
ISSN: 1348-0391
DOI: 10.1380/ejssnt.2006.584