Theoretical limits of thermoelectric figure of merit inn-typeTiO2polymorphs
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چکیده
منابع مشابه
Enhanced thermoelectric figure of merit of p-type half-Heuslers.
Half-Heuslers would be important thermoelectric materials due to their high temperature stability and abundance if their dimensionless thermoelectric figure of merit (ZT) could be made high enough. The highest peak ZT of a p-type half-Heusler has been so far reported about 0.5 due to the high thermal conductivity. Through a nanocomposite approach using ball milling and hot pressing, we have ach...
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The apparatus for evaluation of the figure of merit (ZT) of thermoelectric devices has been developed. ZT value is comprised of three physical quantities, Seebeck coefficient, electrical conductivity, and thermal conductivity. However, to date, the ZT values of the thermoelectric devices have been evaluated by Harman method due to difficulty in measuring thermal conductivity of the devices with...
متن کاملTwin-driven thermoelectric figure-of-merit enhancement of Bi2Te3 nanowires.
Thermoelectric figure-of-merits (ZT) are enhanced or degraded by crystal defects such as twins and excess atoms that are correlated with thermal conductivity (k) and carrier concentration (n). For Bi2Te3, it is unclear whether the crystal defects can enhance ZT without a degradation in the thermopower factor. In the present study, n-type Bi2Te3 nanowires (NWs) are electrochemically synthesized ...
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Rajeev Singh, Zhixi Bian, Ali Shakouri, Gehong Zeng, Je-Hyeong Bahk, John E. Bowers, Joshua M. O. Zide, and Arthur C. Gossard Baskin School of Engineering, University of California, Santa Cruz, California 95064, USA Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA Department Materials, University of Santa Barbara, California 93106...
متن کاملEnhanced thermoelectric figure of merit in thin GaAs nanowires.
Combining density functional theory and the nonequilibrium Green's function method, we investigate the thermoelectric properties of thin GaAs nanowires (NWs). After identifying the most stable structures for GaAs NWs, either in wurtzite (wz) or zinc blende (zb) stacking, we present a systematic analysis on the thermoelectric properties of these NWs and their dependence on stacking type (wz or z...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2015
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.91.165104