The Mechanism of Layer Stacked Clamping (LSC) for Polishing Ultra-Thin Sapphire Wafer

Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system

Advanced Production Challenges for Automated Ultra-thin Wafer Handling

The handling of thin wafers in today’s production lines demands high standards of the automation as well as complex investigations with a closer look on the actual and future needs for an economic and competitive production of solar cells. This paper describes the analysis and evaluation methods developed by the authors for ultrathin wafers (<100 μm) which are created by a newly developed wafer...

Wafer ultra-thinning process for 3D stacked devices and the influences on the device characteristics

In the semiconductor industry, 3D integration using through-silicon via (TSV) has been considered to be a promising way for improving performance and density instead of conventional device scaling. Si wafer thinning is an important technology in 3D stacking. Since the ultra-thin device provides low aspect ratio TSV, several advantages can be expected, such as reduced parasitic RC delay, lower p...

Yield Improvement for 3D Wafer-to-Wafer Stacked Memories

Recent enhancements in process development enable the fabrication of three dimensional stacked ICs (3D-SICs) such as memories based on Wafer-to-Wafer (W2W) stacking. One of the major challenges facing W2W stacking is the low compound yield. This paper investigates compound yield improvement for W2W stacked memories using layer redundancy and compares it to wafer matching. First, an analytical m...

Ultra-High Density MEMS-Based Interconnect for Wafer-Level Ultra-Thin Die Stacking Technology

This work describes a novel smart three axis compliant (STAC) interconnect targeted to revolutionize chipto-chip and chip-to-board high-density three dimensional (3D) integration for ultra-thin Si dies (≤ 75 μm) at the wafer level. The STAC interconnect is a 3D-compliant interconnect which allows stacked ultra-thin chips to move or flex freely during operation with negligible stress imposed on ...