The improved inverted AlGaAs/GaAs interface: its relevance for high-mobility quantum wells and hybrid systems
نویسندگان
چکیده
Abstract Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm 2 V s ?1 if the AlGaAs alloy is grown after GaAs. Surprisingly, may drop to a few millions for identical but inverted AlGaAs/GaAs interface, i.e. reversed layering. Here we report on series heterostructures with varying growth parameters including temperature, doping, and composition. Minimizing segregation both dopants background impurities leads 13 structures. The dependence mobility density tuned gate or illumination found be no doping layers exist between 2DEG respective gate. Otherwise, it differs significantly compared normal interface Reducing distance surface down 50 nm requires an additional layer in order compensate surface-Schottky barrier. suitability such shallow structures future semiconductor-superconductor hybrid systems discussed. Lastly, our understanding improved enables us produce optimized double-sided doped quantum wells exhibiting 40 1 K.
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2021
ISSN: ['0268-1242', '1361-6641']
DOI: https://doi.org/10.1088/1361-6641/ac0d98