The impact of plasma enhancement on the deposition of carbon‐containing zirconia films by metalorganic chemical vapor deposition

Zirconia layers are often used as thermal barriers. In recent years, depositions by chemical vapor deposition methods using a metalorganic precursor (MOCVD) have been primarily investigated. Here, we combine MOCVD with plasma activation - plasma-enhanced (PECVD]) of the gas phase and/or growth surface to lower temperature and allow for flexible coating design. PECVD causes be transformed into chemically active species, yielding thin films five times higher sticking coefficient compared MOCVD. This leads onset crystallization at temperatures. Carbon is incorporated oxygen sites, so that crystalline structure zirconia preserved, but electrical conductivity affected. The like pure zirconia.