The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN

GaN Nanowires on N-Polar GaN

In this work, the position-controlled growth of GaN nanowires on sapphire wafers and on N-polar GaN templates is presented using selective area vapor-liquid-solid growth in a metalorganic vapor phase reactor. Misoriented sapphire wafers and TMIn acting as surfactant are applied in order to achieve N-polar GaN buffer layers with high crystal and surface quality, suitable for a subsequent nano-pa...

Heteroepitaxial Growth of GaN on Unconventional Templates and LayerTransfer Techniques for LargeArea, Flexible/Stretchable LightEmitting Diodes

temperature. This wide spectral range enables potential applications from the infrared to the deep ultraviolet regions of the electromagnetic spectrum. This makes GaN-based nitrides one of the most important materials for light sources such as light-emitting diodes (LEDs). [ 1–5 ] Sapphire has long been used as a substrate for GaN-based LEDs, and silicon (Si) is becoming its strong competitor d...

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.

N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the buil...

Deep centers in a free-standing GaN layer

Free standing GaN nano membrane by laser liftoff method

In this work, we present a method able to fabricate thin GaN nanomembranes fit for device applications. Starting from commercial GaN on sapphire substrates, MBE was used to deposit a sacrificial layer, which comprises of a superlattice of InN/InGaN, after which thin a GaN film of hundreds of nanometers thickness was grown on top. Pulsed laser irridiation with photon energy of 2.3eV gives rise t...