The efficiency of n- and p-type doping silicon carbide nanocage toward (NO2, SO2, and NH3) gases

the investigation of the relationship between type a and type b personalities and quality of translation

چکیده ندارد.

existence and approximate $l^{p}$ and continuous solution of nonlinear integral equations of the hammerstein and volterra types

بسیاری از پدیده ها در جهان ما اساساً غیرخطی هستند، و توسط معادلات غیرخطی ‎‏بیان شد‎‎‏ه اند. از آنجا که ظهور کامپیوترهای رقمی با عملکرد بالا، حل مسایل خطی را آسان تر می کند. با این حال، به طور کلی به دست آوردن جوابهای دقیق از مسایل غیرخطی دشوار است. روش عددی، به طور کلی محاسبه پیچیده مسایل غیرخطی را اداره می کند. با این حال، دادن نقاط به یک منحنی و به دست آوردن منحنی کامل که اغلب پرهزینه و ...

Stabilization of boron carbide via silicon doping.

Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in ...

Silicon Nanowires: Doping Dependent N- And P- Channel FET Behavior

The electrical transport properties of field effect transistor (FET) devices made of silicon nanowires (SiNWs) synthesized by pulsed laser vaporization (PLV) were studied. From as-grown PLV-SiNW FET, we found pchannel FET behavior with low conductance. To improve conductance, spin on glass (SOG) and vapor doping were used to dope phosphorus and indium into SiNW, respectively. From doping after ...

Boron carbide/n-silicon carbide heterojunction diodes