The Ebers–Moll model for magnetic bipolar transistors
نویسندگان
چکیده
منابع مشابه
the use of appropriate madm model for ranking the vendors of mci equipments using fuzzy approach
abstract nowadays, the science of decision making has been paid to more attention due to the complexity of the problems of suppliers selection. as known, one of the efficient tools in economic and human resources development is the extension of communication networks in developing countries. so, the proper selection of suppliers of tc equipments is of concern very much. in this study, a ...
15 صفحه اولIon bipolar junction transistors.
Dynamic control of chemical microenvironments is essential for continued development in numerous fields of life sciences. Such control could be achieved with active chemical circuits for delivery of ions and biomolecules. As the basis for such circuitry, we report a solid-state ion bipolar junction transistor (IBJT) based on conducting polymers and thin films of anion- and cation-selective memb...
متن کاملBipolar Junction Transistors
Features u Automatic component identification ⇒ Bipolar transistor, with or without protection diode and/or B-E shunt resistor ⇒ Darlington transistors ⇒ Enhancement mode MOSFETs ⇒ Junction FETs ⇒ Triac ⇒ Thyristors ⇒ Diodes ⇒ Unijunction transistors u Automatic pinout identification for all the above components u Gain measurement for bipolar transistors u Test current display u VBE/IB measurem...
متن کاملV. Heterojunction Bipolar Transistors
AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are used for digital and analog microwave applications with frequencies as high as Ku band. HBTs can provide faster switching speeds than silicon bipolar transistors mainly because of reduced base resistance and collector-to-substrate capacitance. HBT processing requires less demanding lithography than GaAs FETs, therefore, HBTs can cost les...
متن کاملInvestigating the changes of electrical characteristics of Bipolar Junction Transistors, before and after gamma irradiation
Bipolar junction transistors (BJTs) are active semiconductor devices commonly used for amplification and switching applications. In this study, transistors have been biased to operate in active region and by measuring the electrical characteristics of BJTs, the effect of gamma irradiation on each of these characteristics was investigated before and after the gamma irradiation by 60Co source. In...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2005
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1886251