The carbon and hydrogen contents in ALD-grown ZnO films define a narrow ALD temperature window

Zinc oxide thin films grown by atomic layer deposition have been subject to great attention over the past few years. In this work, we study ZnO on Si substrates with di-ethyl zinc (DEZ) as metal precursor and H2O or D2O water vapour oxidant. Film composition a function of growth temperature is studied Ion Beam Analysis (IBA) using Rutherford Backscattering Spectrometry (RBS) determine Zn areal density; Nuclear Reaction (NRA) for C O density, Elastic Recoil Detection (ERDA) hydrogen density. The Zn/O ratio close 1 within broad ALD window consistent previous studies, however carbon content varies substantially minimum only much narrower range.