The Advantages of Double Catalytic Layers for Carbon Nanotube Growth at Low Temperatures (<400 °C) in 3D Stacking and Power Applications

A double catalytic layer scheme is proposed and investigated for the low temperature growth of carbon nanotubes (CNTs) over Co (Cobalt), Al (Aluminum), Ti (Titanium) catalysts on a silicon substrate. In this work, we demonstrate CNTs by thermal chemical vapor deposition (TCVD) process at both 350 °C 400 °C. Based scanning electron microscopy (SEM) Raman spectroscopy analyses, good quality demonstrated. This study contributes to on-going research integrating semiconductors into packaging power-related applications, as demonstrated with resistance (~128 Ω) high conductivity (~29.8 Wm−1 K−1) our developed CNTs.