Texturing of InP Surfaces for Device Applications
نویسندگان
چکیده
منابع مشابه
Optimized cleaning method for producing device quality InP(100) surfaces
A very effective, two-step chemical etching method to produce clean InP(100) surfaces when combined with thermal annealing has been developed. The hydrogen peroxide/sulfuric acid based solutions, which are successfully used to clean GaAs(100) surfaces, leave a significant amount of residual oxide on the InP surface which can not be removed by thermal annealing. Therefore, a second chemical etch...
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ژورنال
عنوان ژورنال: MRS Proceedings
سال: 1992
ISSN: 0272-9172,1946-4274
DOI: 10.1557/proc-259-341