منابع مشابه
Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate
We extend the McPherson model for silicon-oxygen bond-breakage in a way to capture the impact of the O-Si-O angle fluctuations on the breakage rate. It is shown that the mean rate is more than 5 times higher and its standard deviation is comparable to the nominal rate corresponding to the fixed angle (typical for α-quartz). The mean rate has appeared to grow exponentially with the electric fiel...
متن کاملBond angle distribution in amorphous germania and silica
The distribution of Ge-O-Ge and Si-O-Si bond angles α in amorphous germania and silica is re-determined on the basis of diffraction experiments. The bond angle α joining adjacent tetrahedra is the central parameter of any continuous random network description (CRN) of these glasses. New high energy photon diffraction experiments on amorphous germania (at photon energies of 97 and 149 keV) are p...
متن کاملBond-length distribution in tetrahedral versus octahedral semiconductor alloys: The case of Ga12xInxN
Large ('1000 atoms) supercell valence force-field simulations are used to investigate the nearest-neighbor bond-length distribution in relaxed tetrahedral ~zinc blende and wurtzite! and octahedral ~rocksalt! Ga12xInxN alloys. We find that, due to the rigidity of the octahedron, the distribution of each anion-cation bond length in rocksalt alloys has two contributions: unrelaxed bonds and relaxe...
متن کاملThermal evolution of antiferromagnetic correlations and tetrahedral bond angles in superconducting FeTe1−xSex
Zhijun Xu,1,2 J. A. Schneeloch,3,4 Jinsheng Wen,5 E. S. Božin,3 G. E. Granroth,6 B. L. Winn,7 M. Feygenson,8 R. J. Birgeneau,1,2 Genda Gu,3 I. A. Zaliznyak,3 J. M. Tranquada,3 and Guangyong Xu3,* 1Physics Department, University of California, Berkeley, California 94720, USA 2Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA 3Condensed Matter Phys...
متن کاملStress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon
A comprehensive study of the stress release and structural changes caused by postdeposition thermal annealing of tetrahedral amorphous carbon ~ta-C! on Si has been carried out. Complete stress relief occurs at 600–700 °C and is accompanied by minimal structural modifications, as indicated by electron energy loss spectroscopy, Raman spectroscopy, and optical gap measurements. Further annealing i...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Chemical Education
سال: 1998
ISSN: 0021-9584,1938-1328
DOI: 10.1021/ed075p1087.3