Testbeam results of the Picosecond Avalanche Detector proof-of-concept prototype

The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in sensor depleted region, was tested beam 180 GeV pions at CERN SPS. features low noise and fast SiGe BiCMOS frontend electronics hexagonal pixels 100 {\mu}m pitch. At bias voltage 125 V, provides full efficiency average time resolution 30, 25 17 ps overall pixel area for power consumption 0.4, 0.9 2.7 W/cm^2, respectively. In this first depends significantly on distance from center pixel, varying highest measured between 13 inter-pixel region.