Tensile Deformation of Si Single Crystals with Easy Glide Orientation

Silicon single crystals were deformed in tensile tests along the [134] direction between 1173 K and 1373 K. The yield point phenomenon was observed specimens below 1273 K, while a continuous above 1323 values of work-hardening rate stage II same as those reported other crystals. Orientation maps specimen obtained by using electron backscattered diffraction method indicated that starts before Schmid factor secondary slip system became larger than primary system. Because constraint due to gripping test piece, kink bands are formed during I onset II, then stress state becomes non-uniaxial. This suggests formation triggers activation secondary, i.e., conjugate increase resolved shear on systems.