Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

The goal of this paper is to provide a comparative analysis the thermal impact on microwave performance high electron-mobility transistors (HEMTs) based GaAs and GaN technologies. To accomplish challenging goal, relative sensitivity changes in ambient temperature determined by using scattering parameter measurements corresponding equivalent-circuit models. studied devices are two HEMTs with same gate width 200 µm but fabricated different semiconductor materials: investigation performed under both cooled heated conditions, varying from ?40 °C 150 °C. Although strongly depends selected operating condition, bias point chosen order enable, as much possible, fair comparison between As will be shown, quite similar trends observed for technologies, more pronounced device.