Temperature dependence of the absorption coefficient in doped quantum wells
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چکیده
منابع مشابه
The temperature dependence of the absorption coefficient of porous silicon
The spectral behavior and the temperature dependence of the absorption coefficient of microporous silicon films are studied in the energy range of 1.2–3.8 eV, between 7 and 450 K. For photon energies above the direct band gap at 3.3 eV, the spectral behavior of the absorption coefficient is similar to that of crystalline silicon, and its absolute value is comparable to that estimated using Brug...
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ژورنال
عنوان ژورنال: Brazilian Journal of Physics
سال: 1999
ISSN: 0103-9733
DOI: 10.1590/s0103-97331999000400021