Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor
نویسندگان
چکیده
منابع مشابه
Temperature dependence of electronic behaviors in quantum dimension junctionless thin-film transistor
The high temperature dependence of junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with 2-nm-thick nanosheet channel is compared with that of JL planar TFTs. The variation of SS with temperature for JL GAA TFTs is close to the theoretical value (0.2 mV/dec/K), owing to the oxidation process to form a 2-nm-thick channel. The bandgap of 1.35 eV in JL GAA TFTs by fitti...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2014
ISSN: 1556-276X
DOI: 10.1186/1556-276x-9-392