Temperature dependence of Al0.2Ga0.8As X-ray photodiodes for X-ray spectroscopy

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Al0.2Ga0.8As X-ray photodiodes for X-ray spectroscopy

Three custom-made Al0.2Ga0.8As p-i-n mesa X-ray photodiodes (200 μm diameter, 3 μm i layer) were electrically characterised and investigated for their response to illumination with soft X-rays from an Fe radioisotope X-ray source (Mn Kα = 5.9 keV; Mn Kβ = 6.49 keV). The AlGaAs photodiodes were shown to be suitable for photon counting X-ray spectroscopy at room temperature. When coupled to a cus...

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ژورنال

عنوان ژورنال: Journal of Applied Physics

سال: 2017

ISSN: 0021-8979,1089-7550

DOI: 10.1063/1.4993914