Technology of FinFET for High RF and Analog/Mixed-Signal Performance Circuits
نویسندگان
چکیده
منابع مشابه
Technology of FinFET for High RF and Analog/Mixed-Signal Performance Circuits
In this paper, we discuss the process, layout and device technologies of FinFET to obtain high RF and analog/mixed-signal performance circuits. The fin patterning due to Side-wall transfer (SWT) technique is useful to not only fabricate narrow fin line but also suppress the fin width variation comparing with ArF and EB lithography. The H2 annealing after Si etching is useful for not only to imp...
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Double Gate FinFET devices are suitable for nano electronic circuits due to better scalability, higher on-current (Ion), improved Sub-threshold Slope (SS) and undoped body (no random dopant fluctuation). Body thickness (TSi) increases the gate control over the channel resulting in reduced short channel effects (SCEs). Thin Tsi increases the quantum confinement of charge, resulting increased thr...
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According to the Moore’s Law, the number of transistors in a unit chip area double every two years. But the existing technology of integrated circuit formation is posing limitations to this law. CMOS technology shows certain limitations as the device is reduced more and more in the nanometer regime out of which power dissipation is an important issue. FinFET is evolving to be a promising techno...
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ژورنال
عنوان ژورنال: IEICE Transactions on Electronics
سال: 2015
ISSN: 0916-8524,1745-1353
DOI: 10.1587/transele.e98.c.455