Surface roughness and in-plane texturing in sputtered thin films
نویسندگان
چکیده
منابع مشابه
Surface roughness and in-plane texturing in sputtered thin films
Real surfaces are not flat on an atomic scale. Studying the effects of roughness on microstructural evolution is of relevance because films are sputtered onto nonideal surfaces in many applications. To this end, amorphous rough substrates of two different morphologies, either elongated mounds or facets, were fabricated. The microstructural development of films deposited onto these surfaces was ...
متن کاملMicrowave Surface Resistance of Reactively Sputtered NbN Thin Films
The surface resistance of niobium nitride {NbN) thin films has been measured at 7. 78 and 10.14 GHz in the temperature range of 1.5 to 4.2 K. The films were reactively sputtered on sapphire substrates to a thickness of approximately 1 micron. The surface resistance was determined by measuring the quality factor (Q) of the TEo] 1 mode of a lead-plated copper cavity where the NbN served as one en...
متن کاملUltraviolet detectors in thin sputtered ZnO films.
Sputtering of ZnO is a well-known technique.'9 The application of sputtered thin films of ZnO has mainly been as surface acoustic wave transducers. To our knowledge nobody has yet used these films as detectors for UV radiation. Measurements of the intensity of UV radiation, for example in medical applications in connection with UV irradiation of the skin, are very inaccurate due to the lack of ...
متن کاملIn-plane magnetic anisotropy in RF sputtered Fe–N thin films
We have fabricated Fe(N) thin films with varied N partial pressure and studied the microstructure, morphology, magnetic 2 properties and resistivity by using X-ray diffraction, atomic force microscopy, transmission electron microscopy, vibrating-sample magnetometer and angle-resolved M-H hysteresis Loop tracer and standard four-point probe method. In the presence of low N2 partial pressure, Fe(...
متن کاملResistivity of thin Cu films with surface roughness
Youqi Ke,1 Ferdows Zahid,1 V. Timoshevskii,1 Ke Xia,2 D. Gall,3 and Hong Guo1 1Department of Physics and Centre for the Physics of Materials, McGill University, Montreal, PQ, Canada H3A 2T8 2Department of Physics, Beijing Normal University, Beijing 100875, China 3Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA Received 24 October 2008...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1998
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.368204