Surface processes during growth of GaAs by MOCVD
نویسندگان
چکیده
منابع مشابه
MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation
High-quality and density-tunable GaAs nanowires (NWs) are directly grown on indium tin oxide (ITO) using Au nanoparticles (NPs) as catalysts by metal organic chemical vapor deposition (MOCVD). Au catalysts were deposited on ITO glass substrate using a centrifugal method. Compared with the droplet-only method, high-area density Au NPs were uniformly distributed on ITO. Tunable area density was r...
متن کاملTitle MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles
High-quality and density-tunable GaAs nanowires (NWs) are directly grown on indium tin oxide (ITO) using Au nanoparticles (NPs) as catalysts by metal organic chemical vapor deposition (MOCVD). Au catalysts were deposited on ITO glass substrate using a centrifugal method. Compared with the droplet-only method, high-area density Au NPs were uniformly distributed on ITO. Tunable area density was r...
متن کاملControlled growth of hexagonal GaN pyramids by hot-wall MOCVD
The growth evolution of hexagonal GaN pyramids are investigated under various growth conditions. The hexagonal GaN pyramids were grown by hot-wall metal organic chemical vapor deposition – process (hot-wall MOCVD) on a (0001) oriented GaN template. We concluded the growth of the hexagonal GaN pyramids can be divided into two different regimes defined by the adsorption kinetics of the {1101} sur...
متن کاملCharacterization of Nanosized Al2O3 Powder Synthesized by Thermal-Assisted MOCVD and Plasma-Assisted MOCVD
Nanosized Al2O3 powder is synthesized by thermal Metal Organic Chemical Vapor Deposition (MOCVD)combined withplasma. The effects of reaction temperature, pressure, Al(CH3)3 (TMA) concentration and...
متن کاملLow Turn-on Voltage InGaP/GaAsSb/GaAs DHBT Grown by MOCVD
In this work, an InGaP/GaAsSb/GaAs DHBT with carbon doping up to 4E19/cm GaAsSb base was studied. A current gain of 115 at the collector current density of 25KA/cm2 was achieved for the Rbs of about 530ohm/sq. Over 100mV turn-on voltage and knee voltage reduction and 2/3 offset voltage were obtained for the GaAsSb based HBT compared with the standard InGaP/GaAs SHBT. The DC gain of the device i...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 1991
ISSN: 0022-0248
DOI: 10.1016/0022-0248(91)90434-7