Surface Morphology of 4H-SiC after Thermal Oxidation
نویسندگان
چکیده
منابع مشابه
Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth
Nano-textured 4H-SiC homoepitaxial layers (NSiCLs) were grown on 4H-SiC(0001) substrates using a low pressure chemical vapor deposition technique (LPCVD), and subsequently were subjected to high temperature treatments (HTTs) for investigation of their surface morphology evolution and graphene growth. It was found that continuously distributed nano-scale patterns formed on NSiCLs which were abou...
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Thermal annealing effects on the characteristics of intrinsic defects in unintentionally doped 4H–SiC were investigated. The 4H–SiC samples were prepared by Low-Pressure Chemical Vapor Deposition (LPCVD) technique. Results show that there is only one Electron Spin Resonance (ESR) peak and a broad, from green to yellow, photoluminescence (PL) band were detected. These results are attributed to t...
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The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). SSRM measurements on p-type 4H-SiC areas selectively exposed to N2O at 1150 °C showed an increased resistance compared to the unexpo...
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The annealing behavior of defects observed in electron paramagnetic resonance EPR and photoluminescence PL is discussed. We consider the divacancy the P6/P7 EPR centers and a previously unreported EPR center that we suggest is a VC-VSi-VC trivacancy and their relationship with each other and with the UD1–3 series of PL lines near 1 eV. We observe that the divacancy and the UD2 PL lines annealin...
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ژورنال
عنوان ژورنال: Materials Science Forum
سال: 2019
ISSN: 1662-9752
DOI: 10.4028/www.scientific.net/msf.963.180