Surface chemistry during plasma etching of silicon
نویسندگان
چکیده
منابع مشابه
Surface chemistry during plasma etching of silicon
Angle-resolved x-ray photoelectron spectroscopy ( X P S ) and laserinduced thermal desorption (LD), combined with laser-induced fluorescence (LIF) detection, were used to study the etching of olycrystalline Si (poly-Si) and single crystal Si(lO0) in high density (1-2 x 10fl ions/cm3), low presswe (0.510 mTorr) C12MBr-containing, helical resonator plasmas. The XPS measurements on both unmasked S...
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ژورنال
عنوان ژورنال: Pure and Applied Chemistry
سال: 1996
ISSN: 1365-3075,0033-4545
DOI: 10.1351/pac199668051071