Surface charges at the interface oxydic semiconductor / electrolyte solution
نویسندگان
چکیده
منابع مشابه
Quantitative probing of surface charges at dielectric– electrolyte interfaces3
The intrinsic charging status at the dielectric–electrolyte interface (DEI) plays a critical role for electrofluidic gating in microfluidics and nanofluidics, which offers opportunities for integration of wet ionics with dry electronics. A convenient approach to quantitatively probe the surface charges at the DEI for material preselection purpose has been lacking so far. We report here a low-co...
متن کاملQuantitative probing of surface charges at dielectric-electrolyte interfaces.
The intrinsic charging status at the dielectric-electrolyte interface (DEI) plays a critical role for electrofluidic gating in microfluidics and nanofluidics, which offers opportunities for integration of wet ionics with dry electronics. A convenient approach to quantitatively probe the surface charges at the DEI for material pre-selection purpose has been lacking so far. We report here a low-c...
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Classical molecular dynamics simulations with polarizable potential models were carried out to quantitatively determine the effects of KCl salt concentrations on the electrostatic surface potentials of the vapor-liquid interface of water. To the best of our knowledge, the present work is the first calculation of the aqueous electrolyte surface potentials. Results showed that increased salt conc...
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Electrostatic potential at the inner plane of the hematite aqueous interface, i.e., surface potential, was measured by means of a single-crystal hematite electrode. Acidic solutions were titrated with base and then back-titrated with acid. Surface potentials were evaluated from electrode potentials by setting the zero value at the isoelectric point. In the case of fast titrations the equilibrat...
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The great reactivity o f semiconductor surfaces and the easy formation o f oxide layers make in-situ STM imaging o f tlie semiconductors/electrolyte interface difficult at a high resolution. Additionally, STM imaging o f such interfaces requires some care as far tunneling conditions are concerned. The paper analyses this question with the system SiINaOH to illustrate the latest advances concern...
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ژورنال
عنوان ژورنال: Solid State Ionics
سال: 1985
ISSN: 0167-2738
DOI: 10.1016/0167-2738(85)90036-0