Superconductor–Insulator Transition in NbTiN Films
نویسندگان
چکیده
منابع مشابه
LOW-LOSS NbTiN FILMS FOR THz SIS MIXER TUNING CIRCUITS
Recent results at 1 THz using normal-metal tuning circuits have shown that SIS mixers can work well up to twice the gap frequency of the junction material (niobium). However, the performance at 1 THz is limited by the substantial loss in the normal metal films. For better performance superconducting films with a higher gap frequency than niobium and with low RF loss are needed. Niobium nitride ...
متن کاملNbTiN/SiO2/NbTiN and NbTiN/SiO2/Al tuning circuits for 1 THz waveguide SIS mixers
Waveguide SIS mixers are presented in which Nb/Al-AlOx/Nb tunnel junctions are integrated with both NbTiN/SiO2/NbTiN and NbTiN/SiO2/Al tuning circuits. The mixers with a NbTiN/SiO2/NbTiN tuning circuit yield relatively low receiver noise temperatures between 700 and 830 GHz, but their sensitivity drops significantly above ~ 850 GHz. In contrast, low-noise heterodyne mixing near 1 THz is observe...
متن کاملSUBMILLIMETER SIS MIXERS USING HIGH CURRENT DENSITY Nb/AlN/Nb TUNNEL JUNCTIONS AND NbTiN FILMS
We are currently exploring ways to improve the performance of SIS mixers above 700 GHz. One approach is to use NbTiN in place of Nb for all or some of the mixer circuitry. With its high gap frequency and low losses demonstrated up to 800 GHz, it should be possible to fabricate an all-NbTiN SIS mixer with near quantumlimited noise performance up to 1.2 THz. Using a quasioptical twin-slot two-jun...
متن کاملStructural phase transition in epitaxial perovskite films
Three different film systems have been systematically investigated to understand the effects of strain and substrate constraint on the phase transitions of perovskite films. In SrTiO3 films, the phase transition temperature Tc was determined by monitoring the superlattice peaks associated with rotations of TiO6 octahedra. It is found that Tc depends on both SrTiO3 film thickness and SrRuO3 buff...
متن کاملMetal-insulator transition in ultrathin LaNiO3 films.
Transport in ultrathin films of LaNiO(3) evolves from a metallic to a strongly localized character as the film's thickness is reduced and the sheet resistance reaches a value close to h/e(2), the quantum of resistance in two dimensions. In the intermediate regime, quantum corrections to the Drude low-temperature conductivity are observed; they are accurately described by weak localization theor...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: JETP Letters
سال: 2017
ISSN: 0021-3640,1090-6487
DOI: 10.1134/s0021364017230060