Superconducting V3Si for quantum circuit applications
نویسندگان
چکیده
V 3 Si thin films are known to be superconducting with transition temperatures up 15 K, depending on the annealing temperature and properties of substrate underneath. Here we investigate film structural prospect further integration in silicon technology for quantum circuits. Two challenges have been identified: (i) large difference thermal expansion coefficient between leads strains after processing, (ii) undesired silicide phase VSi 2 forms when is deposited silicon. The first these studied by depositing layers 200 nm wafers sapphire oxidized silicon, neither which react silicide. These samples then heated cooled room 860 °C, during in-situ XRD measurements performed. Analysis reveals a highly non-linear stress development heating contributions from crystallization subsequent grain growth, as well mismatch substrate, while behaves thermoelastically cooling. second challenge explored 20, 50, 100 bulk For each thickness, six prepared, annealed at 500 750 followed their resistivity, residual resistance ratio critical temperature. A process window identified thicknesses least nm, within trade-off needs made quality its consumption formation . • CMOS-compatible materials enables scaling technologies. Superconducting silicides ideal integration, especially promising high found can crystallized, preventing complete formation. Earlier results indicated negative impact superconductivity (DOI: https://doi.org/10.1063/5.0038638 ). This study finds that stresses controlled
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ژورنال
عنوان ژورنال: Microelectronic Engineering
سال: 2021
ISSN: ['1873-5568', '0167-9317']
DOI: https://doi.org/10.1016/j.mee.2021.111570