Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide

Abstract Non-volatile memories based on ferroelectric hafnium oxide, especially the field-effect transistor (FeFET), have outstanding properties, e.g. for application in neuromorphic circuits. However, material development has focused so far mainly metal–ferroelectric–metal (MFM) capacitors, while FeFETs are metal–ferroelectric–insulator–semiconductor (MFIS) capacitors. Here, influence of interface annealing temperature and Si-doping content investigated. Antiferroelectric-like behavior is strongly suppressed with a thicker layer high temperature. In addition, high-k dielectrics allow layers without retention penalty. Moreover, process window much larger MFIS capacitors compared to MFM-based films. This does not only highlight substrate dependence oxide films, but also gives evidence that phase diagram defined by mechanical stress. Graphic