Substitution Effect on Thermoelectric Properties of ZrNiSn Based Half-Heusler Compounds
نویسندگان
چکیده
منابع مشابه
Effect of Sb doping on the thermoelectric properties of Ti-based half-Heusler compounds, TiNiSn1ÀxSbx
Half-Heusler alloys ~MgAgAs type! with the general formula MNiSn where M is a group IV transition metal ~Hf, Zr, or Ti! are currently under investigation for potential thermoelectric materials. These materials exhibit a high negative thermopower (240 to 2250 mV/K) and low electrical resistivity values ~0.1–8 mV cm! both of which are necessary for a potential thermoelectric material. Results are...
متن کاملEffect of C and N Addition on Thermoelectric Properties of TiNiSn Half-Heusler Compounds
We investigated the thermoelectric properties of the ternary half-Heusler compound, TiNiSn, when introducing C and N. The addition of C or N to TiNiSn leads to an enhanced power factor and a decreasing lattice thermal conductivity by point defect phonon scattering. The thermoelectric performances of TiNiSn alloys are significantly improved by adding 1 at. % TiN, TiC, and figure of merit (ZT) va...
متن کاملResolving the true band gap of ZrNiSn half-Heusler thermoelectric materials
Band structure parameters, such as the band gap, can be estimated using electrical transport properties. In many thermoelectric studies, the temperature dependent Seebeck coefficient is used to estimate the band gap using the Goldsmid–Sharp band gap formula: Eg 1⁄4 2eSmaxTmax. This important, fundamental parameter is useful for characterizing and understanding any semiconductor, but it is parti...
متن کاملThe intrinsic disorder related alloy scattering in ZrNiSn half-Heusler thermoelectric materials
The intrinsic structural disorder dramatically affects the thermal and electronic transport in semiconductors. Although normally considered an ordered compound, the half-Heusler ZrNiSn displays many transport characteristics of a disordered alloy. Similar to the (Zr,Hf)NiSn based solid solutions, the unsubstituted ZrNiSn compound also exhibits charge transport dominated by alloy scattering, as ...
متن کاملRecent Advances in Nanostructured Thermoelectric Half-Heusler Compounds
Half-Heusler (HH) alloys have attracted considerable interest as promising thermoelectric (TE) materials in the temperature range around 700 K and above, which is close to the temperature range of most industrial waste heat sources. The past few years have seen nanostructuing play an important role in significantly enhancing the TE performance of several HH alloys. In this article, we briefly r...
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ژورنال
عنوان ژورنال: MATERIALS TRANSACTIONS
سال: 2006
ISSN: 1345-9678,1347-5320
DOI: 10.2320/matertrans.47.1453