Sub-bandgap photon-assisted electron trapping and detrapping in AlGaN/GaN heterostructure field-effect transistors

Strained-Si heterostructure field effect transistors

The purpose of this review article is to report on the recent developments and the performance level achieved in the strained-Si/SiGe material system. In the first part, the technology of the growth of a high-quality strained-Si layer on a relaxed, linear or step-graded SiGe buffer layer is reviewed. Characterization results of strained-Si films obtained with secondary ion mass spectroscopy, Ru...

Capacitance–Voltage Spectroscopy of Trapping States in GaN/AlGaN Heterostructure Field-Effect Transistors

Capacitance–Voltage Spectroscopy of Trapping States in GaN/AlGaN Heterostructure Field-Effect Transistors W. L. Liu1, Y. L. Chen2, A. A. Balandin1 ∗, and K. L. Wang2 1Nano-Device Laboratory, Department of Electrical Engineering, University of California – Riverside, Riverside, CA 92521, USA 2Device Research Laboratory, Electrical Engineering Department, University of California – Los Angeles, L...

Gate leakage current mechanisms in AlGaNÕGaN heterostructure field-effect transistors

Gate leakage currents in AlGaN/GaN heterostructure field-effect transistor ~HFET! structures with conventional and polarization-enhanced barriers have been studied. Comparisons of extensive gate leakage current measurements with two-dimensional simulations show that vertical tunneling is the dominant mechanism for gate leakage current in the standard-barrier HFET and that the enhanced-barrier s...

Quantum mechanical solver for confined heterostructure tunnel field - effect transistors

Submitted for the MAR14 Meeting of The American Physical Society Quantum mechanical solver for confined heterostructure tunnel field-effect transistors DEVIN VERRECK, imec, KU Leuven, MAARTEN VAN DE PUT, BART SOREE, imec, Universiteit Antwerpen, ANNE VERHULST, imec, WIM MAGNUS, imec, Universiteit Antwerpen, WILLIAM VANDENBERGHE, University of Texas at Dallas, GUIDO GROESENEKEN, imec, KU Leuven ...

Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors