Study on silicon removal property and surface smoothing phenomenon by moderate-pressure microwave hydrogen plasma
نویسندگان
چکیده
The Si removal property achieved by a localized microwave hydrogen plasma was investigated. relationship between generation parameters (input power, H2 gas flow rate, and initial surface roughness) the (etching rate revealed. Stress relief of affected layer etching were also demonstrated. Moreover, this technique presents no etching-rate dependence on crystal plane orientation. Therefore, even though multi-crystalline sample etched, mirror could be In addition, 100-μm-thick thinned to 5.7 μm without breaking sample. roughness etched depends rate. A critical exists, which determines whether becomes rough or smooth. When is significantly lower than large generated owing formation {111} platelet defects induced H atoms in crystal. By contrast, when higher value, suppressed, smooth despite high flux supplied surface. suppression discussed comparing with diffusion into Si. It important maintain obtain
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ژورنال
عنوان ژورنال: Materials Science in Semiconductor Processing
سال: 2021
ISSN: ['1873-4081', '1369-8001']
DOI: https://doi.org/10.1016/j.mssp.2021.105780