Study of Cutoff Frequency at High Collector Current Density in SiGe Single-Heterojunction Bipolar Transistor
نویسندگان
چکیده
منابع مشابه
3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment
A 3-D simulation of single event effects (SEEs) for domestic Silicon–Germanium heterojunction bipolar transistor (SiGe HBT) in extreme environment is performed with TCAD simulation tools. The influences of environment temperature and linear energy transfer (LET) on SEE are investigated. The combined effects of temperature and LET are also discussed. The results show some interesting phenomena b...
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High-speed, low voltage Silicon-Germanium (SiGe) heterojunction bipolar transistors (HBTs) have been designed, fabricated, electrically characterized and modeled. The SiGe HBTs are suitable for use in radio frequency (RF) integrated circuit (IC) applications and were fabricated using non-selective epitaxial growth. The design of the extrinsic base region has been investigated in detail. Transie...
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This paper addresses a study of bipolar transistors specified for analog and analog-digital low cost circuits, working in the radiofrequency range, dedicated to popular mobiles. These devices are fully compatible with a deeply submicronic silicon CMOS technology. Advanced epitaxial growth of strained SiGe on a silicon-germanium substrate enhances the freedom for designing high speed bipolar tra...
متن کاملModeling and Characterization of SiGe HBT Low-Frequency Noise Figures-of-Merit for RFIC Applications
We present the first systematic experimental and modeling results of noise corner frequency ( ) and noise corner frequency to cutoff frequency ratio ( ) for SiGe heterojunction bipolar transistors (HBTs) in a commercial SiGe RF technology. The and ratio are investigated as a function of operating collector current density, SiGe profile, breakdown voltage, and transistor geometry. We demonstrate...
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ژورنال
عنوان ژورنال: American Journal of Applied Sciences
سال: 2004
ISSN: 1546-9239
DOI: 10.3844/ajassp.2004.236.239